Dariskhem Pyngrope

About

Through an integrated approach encompassing mathematical modeling, TCAD simulation, fabrication, and detailed characterization, my research aims to contribute to the optimization of wide band gap semiconductor with the potential to enhance its efficiency and reliability across a spectrum of electronic applications.

Employment

• National Institute of Technology Meghalaya JRF
  2021 - Present

Education

• University of Calcutta M.Sc.
  2018 - 2019
• St. Edmunds College B.Sc.
  2015 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (5)

• Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT
  Semiconductor Science and Technology 2024 DOI: 10.1088/1361-6641/ad4d5a
  +Save
• Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT
  Semiconductor Science and Technology 2024
  +Save
• Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2024 DOI: https://doi.org/10.1002/jnm.3206
  +Save
• RF magnetron sputtering of Ga2O3 thin films: Analysis of thermal annealing induced tuning of structural, optical characteristics, and energy band alignments
  Materials Science in Semiconductor Processing 2024 DOI: https://doi.org/10.1016/j.mssp.2024.108243
  +Save
• RF magnetron sputtering of Ga2 O3 thin films: Analysis of oxygen flow rate impact on stoichiometry, structural, optical characteristics, and energy band alignments
  Materials Science in Semiconductor Processing 2024 DOI: 10.1016/j.mssp.2023.107937
  +Save