AB
Apurba Bhattacharya
Indian Institute of Technology Bombay, Indian Institute of Technology Jodhpur, Indian Space Research Organisation
Research areas: Medicine · Endocrinology, Diabetes and Metabolism · Stress Responses and Cortisol · Adrenal Hormones and Disorders · Neuropeptides and Animal Physiology
Employment
- 2025 - Present
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Indian Institute of Technology Jodhpur Distinguished Professor2024 - 2024
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Indian Space Research Organisation Distinguished Scientist1987 - 2024
Education
Education history is unavailable.
Projects & Funding
Projects & funding information is unavailable.
Publications (30)
- Ta2O5-based recessed-gate enhancement-mode GaN HEMT with exceptionally low gate leakage and high ION/IOFF ratio: Determination of performance window for recessed-gate architecture Save
- Electrically injected InGaN/GaN micro-light emitting diodes: Size-dependent diode characteristics and recombination dynamics Save
- Impact of BB84 QKD transmitter’s parameter mismatch on secure key generation rate Save
- Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas Save
- X-Band High Power GaN SPDT Switch MMIC for Space based Radar Front End Save
- Impact of BB84 QKD Transmitter's Wavelength Mismatch on Secure Key Generation Rate Save
- Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications Save
- Characterization of GaN HEMT at Cryogenic Temperatures Save
- Optimal design of embedded passive components for RF circuits in LTCC Save
- Performance improvement of Al0.3Ga0.7N/AlN/GaN HEMTs using Nitrogen pre-treated Si3N4 passivation Save
- High-Q Embedded LTCC Inductors for high performance RF MCMs Save
- Modeling of electrically tunable metamaterial embedded intersubband transitions in GaN HEMT for terahertz applications Save
- Room temperature photon induced electrical tuning of intersubband transition in GaN HEMT for terahertz applications Save
- Solder Immersion Process of Ceramic Column Grid Array Package Assembly for Space Applications Save
- Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications Save
- MMIC based up-converter for Ku-band data transmitter Save
- Physics based simulation for studying the impact of contact resistance on DC & RF characteristics of AlGaN/AlN/GaN HEMT Save
- Physics-Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT Save
- LTCC Based multi chip modules at c-band and ka-band for satellite payloads Save
- Low Error ku-band 5-bit digital attenuator MMIC Save