Apurba Bhattacharya

Employment

• Indian Institute of Technology Bombay
  2025 - Present
• Indian Institute of Technology Jodhpur Distinguished Professor
  2024 - 2024
• Indian Space Research Organisation Distinguished Scientist
  1987 - 2024

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (30)

• Electrically injected InGaN/GaN micro-light emitting diodes: Size-dependent diode characteristics and recombination dynamics
  Applied Physics Letters 2026 DOI: 10.1063/5.0316826
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• Ta2O5-based recessed-gate enhancement-mode GaN HEMT with exceptionally low gate leakage and high ION/IOFF ratio: Determination of performance window for recessed-gate architecture
  Applied Physics Letters 2026 DOI: 10.1063/5.0351330
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• Impact of BB84 QKD transmitter’s parameter mismatch on secure key generation rate
  Photonic Network Communications 2024 DOI: 10.1007/s11107-023-01010-3
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• Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas
  Applied Physics Letters 2023 DOI: 10.1063/5.0142605
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• X-Band High Power GaN SPDT Switch MMIC for Space based Radar Front End
  2nd International Conference on Wireless Antenna and Microwave Symposium Wams 2023 2023 DOI: 10.1109/WAMS57261.2023.10242975
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• Impact of BB84 QKD Transmitter's Wavelength Mismatch on Secure Key Generation Rate
  International Symposium on Advanced Networks and Telecommunication Systems Ants 2022 DOI: 10.1109/ANTS56424.2022.10227726
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• Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications
  Microelectronic Engineering 2022 DOI: 10.1016/j.mee.2022.111724
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• Characterization of GaN HEMT at Cryogenic Temperatures
  2021 IEEE MTT S International Microwave and RF Conference Imarc 2021 2021 DOI: 10.1109/IMaRC49196.2021.9714643
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• Optimal design of embedded passive components for RF circuits in LTCC
  2021 IEEE MTT S International Microwave and RF Conference Imarc 2021 2021 DOI: 10.1109/IMaRC49196.2021.9714558
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• Performance improvement of Al0.3Ga0.7N/AlN/GaN HEMTs using Nitrogen pre-treated Si3N4 passivation
  Microelectronic Engineering 2021 DOI: 10.1016/j.mee.2021.111617
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