Aishwarya Singh

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Publications (4)

• A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2025.3540094
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• Comprehensive Study of Parasitic Capacitance in CFETs: An Analytical Perspective
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3585907
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• Training-Free Parameter Extraction for Compact Device Models Using Sequential Bayesian Optimization With Adaptive Sampling
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3478177
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• Parasitic Capacitance in Nanosheet FETs: Extraction of Different Components and Their Analytical Modeling
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3382216
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