A REVATHY

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Publications (8)

• Advanced gallium nitride high electron mobility transistors for biosensing applications: Progress, challenges, and future perspectives
  Microelectronic Engineering 2025 DOI: 10.1016/j.mee.2025.112380
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• Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications
  Micro and Nanostructures 2025 DOI: 10.1016/j.micrna.2025.208169
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• Ultra-wide bandgap AlGaN channel HEMTs for portable power electronics applications
  International Journal of Nanoelectronics and Materials (IJNeaM) 2023
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• LG 55 nm T‐gate InGaN/GaN channel based high electron mobility transistors</scp> for stable transconductance operation
  International Journal of RF and Microwave Computer-Aided Engineering 2022 DOI: 10.1002/mmce.23308
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• Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics
  Electronics 2022 DOI: 10.3390/electronics11020225
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• Composite‐channel In 0. 17 Al 0 . 83 N /In 0. 1 …
  International Journal of RF and Microwave Computer-Aided Engineering 2021 DOI: 10.1002/mmce.22775
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• Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications
  2021 DOI: 10.21203/rs.3.rs-163255/v1
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• Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications
  ResearchSquare 2021 DOI: 10.21203/rs.3.rs-163255
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