AN
Arpit Nandi
University of Bristol, Indian Institute of Technology Bombay, Indian Institute of Technology Mandi, University of Mumbai
Research areas: Materials Science · Electronic, Optical and Magnetic Materials · Ga2O3 and related materials · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies
0000-0003-1160-8655
Employment
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The University of Bristol Academic , Research Associate in ultrawide bandgap Gallium Oxide MOCVD Growth2026 - 2026
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Indian Institute of Technology Bombay Junior Research Fellow2017 - 2019
Education
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The University of Bristol Doctor of Philosophy2022 - Present
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The University of Bristol Member2022 - 2026
- 2019 - Present
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University of Mumbai B.E. Electronics2013 - 2017
Projects & Funding
Projects & funding information is unavailable.
Publications (16)
- MOCVD Growth of κ-Ga2O3 on Al-Rich AlxGa1–xN Templates: Phase Diagram and Microstructural Evolution Save
- On the nature of deep-level defects in β-Ga2O3 epilayers: The impact of isochronal rapid thermal annealing Save
- Microanalysis of β-(AlxGa1−x)2O3 Films Grown by MOCVD Save
- (Pseudo-)symmetry-driven coherent interfaces and texture in epitaxial β-Ga2O3 thin films on (001) diamond Save
- Adherent β-Ga2O3 thin films on single crystal diamond (001) substrates enabled by (AlxGa1−x)2O3 buffer layers Save
- Molecular beam epitaxy of boron arsenide layers Save
- Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications Save
- Carrier transport and electronic defects in gallium oxide studied by photoconductivity techniques Save
- Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates Save
- Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition Save
- Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics Save
- Epitaxial Growth of (−201) β-Ga2O3 on (001) Diamond Substrates Save
- Selective area growth of β-Ga2O3 Save
- Broad Range (254–302 nm) and High Performance Ga2O3:SnO2 Based Deep UV Photodetector Save
- Design and Analysis of P-GaN/N-Ga₂O₃ Based Junction Barrier Schottky Diodes Save
- Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga₂O₃/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector Save