Neeraj Panwar

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Publications (14)

• Reaction-Drift Model for Switching Transients in Pr₀.₇Ca₀.₃MnO₃-Based Resistive RAM
  Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5 more
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.3011387
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• Temperature Effects in SET/RESET Voltage-Time Dilemma in Pr0.7Ca0.3MnO3-Based RRAM
  Neeraj Panwar, Udayan Ganguly
  IEEE Transactions on Electron Devices 2018 DOI: 10.1109/TED.2018.2882447
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• Arbitrary Spike Time Dependent Plasticity (STDP) in memristor by analog waveform engineering
  Neeraj Panwar, Bipin Rajendran, Udayan Ganguly
  IEEE Electron Device Letters 2017 DOI: 10.1109/LED.2017.2696023
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• Effect of thermal resistance and scaling on dc-IV characteristics of PCMO based RRAM devices
  S. Chouhan, Pankaj Kumbhare, Abhishek Khanna +2 more
  Device Research Conference - Conference Digest, DRC 2017 DOI: 10.1109/DRC.2017.7999428
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• PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP
  Sandip Lashkare, Neeraj Panwar, Pankaj Kumbhare +2 more
  IEEE Electron Device Letters 2017 DOI: 10.1109/LED.2017.2723503
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• Self-Heating during submicrosecond Current Transients in Pr<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf>-Based RRAM
  Neeraj Panwar, Abhishek Khanna, Pankaj Kumbhare +2 more
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2016.2632712
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• A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism
  Pankaj Kumbhare, Indranil Chakraborty, Amritpal Singh +3 more
  2015 15th Non-Volatile Memory Technology Symposium, NVMTS 2015 2016 DOI: 10.1109/NVMTS.2015.7457491
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• A comprehensive study of effect of composition on resistive switching of Hf<inf>x</inf>Al<inf>1-x</inf>O<inf>y</inf> based RRAM devices by combinatorial sputtering
  Pankaj Kumbhare, Paritosh Meihar, Senthilkumar Rajarathinam +4 more
  Materials Research Society Symposium Proceedings 2015 DOI: 10.1557/opl.2015.82
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• Effect of morphological change on unipolar and bipolar switching characteristics in Pr<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf>based RRAM
  Neeraj Panwar, Pankaj Kumbhare, Ajit Singh +2 more
  Materials Research Society Symposium Proceedings 2015 DOI: 10.1557/opl.2015.192
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• Materials parameter extraction using analytical models in PCMO based RRAM
  Indranil Chakraborty, Amritpal Singh, Pankaj Kumbhare +2 more
  Device Research Conference - Conference Digest, DRC 2015 DOI: 10.1109/DRC.2015.7175568
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• Variability assessment and mitigation by predictive programming in Pr<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> based RRAM
  Neeraj Panwar, Udayan Ganguly
  Device Research Conference - Conference Digest, DRC 2015 DOI: 10.1109/DRC.2015.7175595
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• Memristive synaptic plasticity in Pr<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf>RRAM by bio-mimetic programming
  Neeraj Panwar, D. Kumar, Navnidhi Kumar Upadhyay +3 more
  Device Research Conference - Conference Digest, DRC 2014 DOI: 10.1109/DRC.2014.6872334
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• Conducting oxide electrode to mitigate mechanical instability (bubble formation) during operation of La<inf>1-x</inf>Sr<inf>x</inf>MnO<inf>3</inf>(LSMO) based RRAM
  Rajashree Nori, N. Ravi Chandra Raju, Naijo Thomas +6 more
  Materials Research Society Symposium Proceedings 2013 DOI: 10.1557/opl.2013.381
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• Thermal budget reduction for back-end compatibility and control of resistance switching mechanism (unipolar to bipolar) in Pr<inf>1-x</inf>Ca<inf>x</inf>MnO<inf>3</inf>(PCMO) RRAM
  Neeraj Panwar, Gurudatt Rao, N. Ravi Chandra Raju +6 more
  Materials Research Society Symposium Proceedings 2013 DOI: 10.1557/opl.2013.348
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